IRLR7821 데이터 시트보기 (PDF) - International Rectifier

부품명

상세내역

일치하는 목록

IRLR7821

HEXFET® Power MOSFET

International Rectifier 

IRLR/U7821

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)

Drain-to-Source Breakdown Voltage

30 ––– ––– V VGS = 0V, ID = 250µA

Breakdown Voltage Temp. Coefficient ––– 23 ––– mV/°C Reference to 25°C, ID = 1mA

f Static Drain-to-Source On-Resistance ––– 7.5 10 mΩ VGS = 10V, ID = 15A

––– 9.5 12.5

f VGS = 4.5V, ID = 12A

Gate Threshold Voltage

1.0 ––– ––– V VDS = VGS, ID = 250µA

Gate Threshold Voltage Coefficient

––– -5.3 ––– mV/°C

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0 µA VDS = 24V, VGS = 0V

––– ––– 150

VDS = 24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

Qg

Total Gate Charge

46 ––– –––

––– 10 14

S VDS = 15V, ID = 12A

Qgs1

Qgs2

Qgd

Qgodr

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

––– 2.0 –––

VDS = 16V

––– 1.2 ––– nC VGS = 4.5V

––– 2.5 –––

ID = 12A

––– 4.3 –––

See Fig. 16

Qsw

Switch Charge (Qgs2 + Qgd)

––– 3.7 –––

Qoss

td(on)

tr

td(off)

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

––– 8.5 ––– nC VDS = 16V, VGS = 0V

––– 11 –––

f VDD = 15V, VGS = 4.5V

––– 4.2 –––

ID = 12A

––– 10 ––– ns Clamped Inductive Load

tf

Fall Time

––– 3.2 –––

Ciss

Input Capacitance

––– 1030 –––

VGS = 0V

Coss

Output Capacitance

––– 360 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 120 –––

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

IAR

EAR

dh Single Pulse Avalanche Energy

Ù Avalanche Current

™ Repetitive Avalanche Energy

Typ.

–––

–––

–––

Max.

230

12

7.5

Units

mJ

A

mJ

Diode Characteristics

IS

Parameter

Continuous Source Current

f Min. Typ. Max. Units

Conditions

––– ––– 65

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ùh (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

2

A showing the

––– ––– 260

integral reverse

G

––– ––– 1.0

p-n junction diode.

S

f V TJ = 25°C, IS = 12A, VGS = 0V

––– 26

––– 15

38

23

f ns TJ = 25°C, IF = 12A, VDD = 15V

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

Share Link: