2SB649 데이터 시트보기 (PDF) - Weitron Technology
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2SB649 Datasheet PDF : 5 Pages
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2SB649/2SB649A
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage
IC = -1.0mA, IE = 0
V(BR)CBO
-180
-
Collector-Base Breakdown Voltage
IC = -10mA, IB = 0
2SB649
2SB649A
V(BR)CEO
-120
-160
-
Emitter-Base Breakdown Voltage
IC = 0, IE = -1.0mA
V(BR)EBO
-5.0
-
Collector Cutoff Current
VCB = -160V, IE = 0
Emitter Cutoff Current
VEB = -4.0V, IC= 0
ICBO
-
-
IEBO
-
-
Max
Unit
-
V
-
V
-
V
-10
µA
-10
µA
ON CHARACTERISTICS
DC Current Gain
VCE = -5.0V, IC = -150mA
2SB649
hFE(1)
60
2SB649A
60
VCE = -5.0V, IC = -500mA
Collector-Emitter Saturation Voltage
IC = -500mA, IB = -50mA
Base-Emitter Voltage
VCE = -5.0V, I C = -150mA
Transition frequency
VCE = -5.0V, I C = -150mA
Collecotr Output Capacitance
VCB = -10V, I E = 0, f = 1MHz
hFE(2)
30
VCE(sat)
-
VBE
-
fT
-
Cob
-
-
320
200
-
-
-
-
-1.0
V
-
-1.5
V
140
-
MHz
27
-
pF
CLASSIFICATION OF hFE(1)
Rank
Range
B
60-120
C
100-200
WEITRON
2/5
http://www.weitron.com.tw
D
160-320
21-Mar-06
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