2SB649 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SB649 Datasheet PDF : 8 Pages
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2SB649, 2SB649A
Maximum Collector Dissipation
Curve
30
20
–3
–1.0
ICmax
Area of Safe Operation
(–13.3 V, –1.5 A)
(–40 V, –0.5 A)
–0.3
–0.1
DC Operation (TC = 25°C)
10
–0.03
(–120 V, –0.038 A)
(–160 V, –0.02 A)
2SB649
2SB649A
–0.01
0
50
100
150
–1
–3
–10 –30 –100 –300
Case temperature TC (°C)
Collector to emitter voltage VCE (V)
Typical Output Characteristics
–1.0
–0.8
–––5–44.03..50.5
TC = 25°C
–3.0
–2.5
–0.6
–2.0
–1.5
–0.4
–1.0
–0.2
–0.5 mA
IB = 0
0
–10 –20 –30 –40 –50
Collector to emitter voltage VCE (V)
–500
Typical Transfer Characteristics
VCE = –5 V
–100
–10
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to emitter voltage VBE (V)
4
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