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2N3502

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Semelab - > TT Electronics plc  

2N3502

2N3503

2N3504

2N3505

ELECTRICAL CHARACTERISTICS (25°C free air temperature unless otherwise stated)

Parameter

Test Conditions

Min. Typ.

BVCBO

Collector to Base

Breakdown Voltage

IC = 10mA IE = 0

2N3503 / 2N3505 -60

2N3502 / 2N3504 -45

BVEBO

Emmiter to Base

IE = 10mA

IC = 0

-5

Breakdown Voltage

VCEO

Collector-Emitter

Sustaining Voltage

IC = 10mA IB = 0

2N3503 / 2N3505 -60

2N3502 / 2N3504 -45

ICES

Collector Cutoff Current VCE = -50V VBE = 0

VCE = -30V VBE = 0

2N3503 / 2N3505

2N3502 / 2N3504

ICBO(150)

Collector Reverse

Current

IE = 0

VCB = -50V

t = 150°C VCB = -30V

2N3503 / 2N3505

2N3502 / 2N3504

IC = 10mA VCE = -10V

140

IC = 50mA VCE = -1.0V

115

IC = 1.0mA VCE = -10 V

135

hFE

DC Current Gain

IC = 150mA VCE = -10V

100

IC = 10mA VCE = -10V

80

IC = 500mA VCE = -10 V t = -55°C

50

IC = 50mA VCE = -1.0V

50

VCE(sat)

Collector Saturation

Voltage

IC = 50mA IB = 2.5mA

IC = 150mA IB = 15mA

IC = 500mA IB = 50mA

IC = 50mA IB = 2.5mA

VBE(sat) Base Saturation Voltage IC = 150mA IB = 15mA

IC = 500mA IB = 50mA

FT

Transition Frequency IC = 50mA VCE = -20V f = 100MHZ

2

Cob

Output Capacitance

VCB = -10V IE = 0

ton

Turn On Time

toff

Turn Off Time

IC = 300mA IB1 = 30mA IB2 = -30mA

0.07

0.05

270

160

200

150

120

70

100

-0.08

-0.18

-0.5

-0.9

-1.0

2.50

4.5

30

65

Max. Unit

V

V

V

10

nA

10

10

mA

10

300

300 —

-0.25

-0.4

V

-1.6

-1.0

-1.3

V

-2.0

—

8.0

pf

40

ns

100

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 4/99

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