MBM29DL64DF 데이터 시트보기 (PDF) - Fujitsu

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MBM29DL64DF

64 M (8 M ×8/4 M ×16) BIT FLASH MEMORY

Fujitsu 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20905-1E

FLASH MEMORY

CMOS

64 M (8 M × 8/4 M × 16) BIT

Dual Operation

MBM29DL64DF-70

s DESCRIPTION

MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16

bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be

programmed in system with 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations.

The device can also be reprogrammed in standard EPROM programmers.

The device is organized into four physical banks : Bank A, Bank B, Bank C and Bank D, which are considered to

be four separate memory arrays operations. This device is the almost identical to Fujitsu’s standard 3 V only Flash

memories, with the additional capability of allowing a normal non-delayed read access from a non-busy bank of

the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the

other bank.

s PRODUCT LINE UP

(Continued)

Part No.

Power Supply Voltage VCC (V)

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

MBM29DL64DF-70

3.0

V

+0.6 V

−0.3 V

70

70

30

s PACKAGES

48-pin plastic TSOP (1)

48-ball plastic FBGA

Marking Side

(FPT-48P-M19)

(BGA-48P-M13)

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