Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW11F; BUW11AF
handboo1k,0h2alfpage
hFE
10
VCE = 5 V
1V
MBC095
1
10−2
10−1
1
10
102
IC (A)
Tj = 125 °C.
Fig.7 DC current gain; typical values.
handbook, halfpage
VIM
0
tp
T
VCC
RL
RB
D.U.T.
MGE244
VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.
The values of RB and RL are selected in accordance with ICon and
IBon requirements.
Fig.8 Test circuit resistive load.
handbook, halfpage
90%
IB
10%
tr ≤30 ns
90%
IC
10%
ton
MBB731
IB on
t
IB off
IC on
tf
t
ts
tr ≤ 20 ns.
Fig.9 Switching time waveforms with
resistive load.
1997 Aug 14
andbook, halfpage
+IB
−VBE
VCC
LC
LB
D.U.T.
VCL
MGE246
VCL = up to 1000 V; VCC = 30 V; VBE = −1 V to −5 V; LB = 1 µH;
LC = 200 µH.
Fig.10 Test circuit inductive load and reverse
bias SOAR.
7