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F12N10L

N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ

Fairchild Semiconductor 

Data Sheet

January 2002

RFP12N10L

12A, 100V, 0.200 Ohm, Logic Level,

N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate

power field effect transistors specifically designed for use

with logic level (5V) driving sources in applications such as

programmable controllers, automotive switching and

solenoid drivers. This performance is accomplished through

a special gate oxide design which provides full rated

conduction at gate biases in the 3V to 5V range, thereby

facilitating true on-off power control directly from logic circuit

supply voltages.

Formerly developmental type TA09526.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP12N10L

TO-220AB

F12N10L

NOTE: When ordering, include the entire part number.

Features

• 12A, 100V

• rDS(ON) = 0.200Ω

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS,

TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Symbol

D

Packaging

G

S

DRAIN

(TAB)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

©2002 Fairchild Semiconductor Corporation

RFP12N10L Rev. B

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