STTH1004 데이터 시트보기 (PDF) - STMicroelectronics
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STTH1004 Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STTH1004
Table 2. Thermal parameters
Symbol
Rth(j-c) Junction to case
Parameter
TO-220FPAC
Value
6
Unit
° C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min Typ Max
Unit
IR (1) Reverse leakage current
VF (2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
VR = VRRM
IF = 10 A
1
µA
20 200
1.5 1.7
V
1.15 1.35
To evaluate the conduction losses use the following equation:
P = 1.05 x IF(AV) + 0.03 IF2(RMS)
Table 4.
Symbol
Recovery characteristics
Parameter
trr Reverse recovery time Tj = 25° C
tfr
VFP
IRM
Sfactor
Forward recovery time Tj = 25° C
Peak forward voltage
Tj = 25° C
Reverse recovery current
Softness factor
Tj = 125° C
Test conditions
IF = 0.5 A, Irr = 0.25 A
IR = 1 A
IF = 1 A, VR = 30 V
dIF/dt = -50 A/µs
IF = 10 A, dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
IF = 10 A , dIF/dt = 100 A/µs
IF = 10 A, VCC = 200 V
dIF/dt = 200 A/µs
Min Typ Max Unit
15 20
ns
40
140 ns
3
V
6.2 8
A
0.3
Figure 1. Conduction losses versus
average forward current
Figure 2. Forward voltage drop versus
forward current
P (W)
18
16
14
12
10
8
6
4
2
0
0
2
d=0.05
d=0.1
d=0.2
IF(av) (A)
4
6
d=0.5
d=1
T
8
10
12
IFM(A)
200
180
Tj=125°C
160
(Maximum values)
140
120
Tj=125°C
(Typical values)
100
80
Tj=25°C
(Maximum values)
60
40
20
VFM(V)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
2/7
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