BT149 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
일치하는 목록
BT149 Datasheet PDF : 6 Pages
| |||
Philips Semiconductors
Thyristors
logic level
Product specification
BT149 series
Ptot / W
0.8
conduction form
0.7
angle
degrees
factor
a
30
4
0.6
60
2.8
90
2.2
120
1.9
0.5
180
1.57
0.4
4
0.3
BT169
1.9
2.2
2.8
Tc(max) / C
77
a = 1.57
83
89
95
101
107
0.2
113
0.1
119
0
125
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
IF(AV) / A
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where
a = form factor = IT(RMS)/ IT(AV).
1000 ITSM / A
BT169
100
10 IT
ITSM
T time
Tj initial = 25 C max
1
10us
100us
1ms
T/s
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A
1
0.8
BT169
83 C
0.6
0.4
0.2
0-50
0
50
100
150
Tlead / C
Fig.3. Maximum permissible rms current IT(RMS) ,
versus lead temperature, Tlead.
10 ITSM / A
8
6
BT169
IT
ITSM
T time
Tj initial = 25 C max
4
2
01
10
100
1000
Number of half cycles at 50Hz
Fig.4. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
2 IT(RMS) / A
BT169
1.5
1
0.5
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tlead ≤ 83˚C.
VGT(Tj)
1.6 VGT(25 C)
BT151
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.200
Share Link: 