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2N4400

SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited 

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

TO-92 Plastic Package

2N4400, 2N4401

2N4402, 2N4403

2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Switching Applications

123

1 = EMITTER

2 = BASE

3 = COLLECTOR

EBC

DIM MIN

MAX

A

4,32

5,33

B

4,45

5,20

C

3,18

4,19

D

0,41

0,55

E

0,35

0,50

F

5 DEG

G

1,14

1,40

H

1,14

1,53

K

12,70 –

L

1.982 2.082

ALL DIMENSIONS IN M.M.

ABSOLUTE MAXIMM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current Continuous

Power Dissipation At Ta=25 ºC

Derate Above 25 ºC

Power Dissipation At Tc=25 ºC

Derate Above 25 ºC

Operating & Storage

Junction Temperature Range

Symbol

VCEO

VCBO

VEBO

IC

PD

PD

Tj,Tstg

2N4400/01

40

2N4402/03 Units

40 V

60

40 V

6

5V

- 600

- mA

- 625

- mW

- 5.0

- mW/ºC

- 1.5

-W

-

12

- mW/ºC

-55 to +150

ºC

THERMAL RESISTANCE

Junction to Case

Rth (j-c)

- 83.3 -

Junction to Ambient

Rth (j-a)

- 200

-

ELECTRICAL CHARACTERISTICS (Ta =25 ºC unless otherwise specified)

ºC/W

ºC/W

Continental Device India Limited

Data Sheet

Page 1 of 6

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