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2N3906G

PNP EPITAXIAL PLANAR TRANSISTOR

Unisonic Technologies 

2N3906

PNP EPITAXIAL PLANAR TRANSISTOR

 ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

VCBO

-40

V

VCEO

-40

V

Emitter-Base Voltage

Collector Current

VEBO

-5

V

IC

-200

mA

Base Current

Collector dissipation

IB

SOT-89

TO-92

PC

-50

mA

550

625

mW

Junction Temperature

TJ

125

°С

Operating Temperature

Storage Temperature

TOPR

-20 ~ +85

°С

TSTG

-40 ~ +150

°С

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector Cut-Off Current

ICEX VCE=-30V, VEB=-3V

Base Cut-Off Current

IBL VCE=-30V, VEB=-3V

Collector-Base Breakdown Voltage

VCBO IC=-10A, IE=0

-40

Collector-Emitter Breakdown Voltage VCEO IC=-1mA, IB=0 (Note)

-40

Emitter-Base Breakdown Voltage

VEBO IE=-10A, IC=0

-6

hFE1 VCE=-1V, IC=-0.1mA

60

hFE2 VCE=-1V, IC=-1mA

80

DC Current Gain (Note)

hFE3 VCE=-1V, IC=-10mA

100

hFE4 VCE=-1V, IC=-50mA

60

hFE5 VCE=-1V, IC=-100mA

30

Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-10mA, IB=-1mA

(Note)

VCE(SAT)2 IC=-50mA, IB=-5mA

Base-Emitter Saturation Voltage

VBE(SAT)1 IC=-10mA, IB=-1mA

VBE(SAT)2 IC=-50mA, IB=-5mA

-0.65

Transition Voltage

fT VCE=-20V, IC=-10mA, f=100MHz

250

Output Capacitance

COB VCB=-5V, IE=0, f=1MHz

Turn On Time

tON VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=-1mA

Turn Off Time

tOFF IB1=1B2=-1mA

Note: Pulse test: PW<=300s, Duty Cycle<=2%

TYP

MAX UNIT

-50 nA

-50 nA

V

V

V

300

-0.25

-0.4

-0.85

-0.95

4.5

70

300

V

V

MHz

pF

ns

ns

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R201-028.E

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