BS616UV2021AI 데이터 시트보기 (PDF) - Brilliance Semiconductor

부품명

상세내역

일치하는 목록

BS616UV2021AI

Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616UV2021

„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

PARAMETER

NAME

PARAMETER

V IL

Guaranteed Input Low

Voltage(2)

V IH

Guaranteed Input High

Voltage(2)

I IL

Input Leakage Current

TEST CONDITIONS

MIN. TYP.(1) MAX. UNITS

Vcc=2V

0.6

-0.5 --

V

Vcc=3V

0.8

Vcc=2V 1.4

--

Vcc+0.2

V

Vcc=3V 2.0

Vcc = Max, VIN = 0V to Vcc

--

--

1

uA

I OL

Output Leakage Current Vcc = Max, CE1 = VIH or CE2=VIL or OE = VIH,

V = I/O 0V to Vcc

--

--

1

uA

V OL

V OH

Output Low Voltage

Output High Voltage

Vcc = Max, IOL= 2mA

Vcc = Min, IOH = -1mA

Vcc=2V

--

--

0.4

V

Vcc=3V

Vcc=2V 1.6

--

--

V

Vcc=3V 2.4

I CC

Operating Power Supply Vcc = Max, CE1= V ,IL CE2=VIH Vcc=2V --

--

15

Current

IDQ = 0mA, F = Fmax(3)

Vcc=3V --

--

20

mA

I CCSB

Standby Current-TTL

Vcc = Max, CE1 = VIH or CE2=VIL Vcc=2V --

IDQ = 0mA

Vcc=3V --

--

--

0.5

1

mA

Vcc = Max, CE1ЊVcc-0.2V or Vcc=2V --

0.08 0.5

I CCSB1

Standby Current-CMOS CE2Љ0.2V,

Other inputs ЊVcc - 0.2V or

uA

VINЉ 0.2V

Vcc=3V --

0.1

0.7

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

R0201-BS616UV2021

4

Revision 2.4

April 2002

Share Link: