NGB8202AN 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
일치하는 목록
NGB8202AN Datasheet PDF : 8 Pages
| |||
NGB8202N, NGB8202AN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage
VCE(on)
Test Conditions
IC = 6.5 A, VGE = 3.7 V
− NGB8202N
IC = 6.5 A, VGE = 3.7 V
− NGB8202AN
IC = 9.0 A, VGE = 3.9 V
− NGB8202N
IC = 9.0 A, VGE = 3.9 V
− NGB8202AN
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
IC = 7.5 A,
VGE = 4.5 V
IC = 10 A,
VGE = 4.5 V
IC = 15 A,
VGE = 4.5 V
IC = 20 A, VGE = 4.5 V −
NGB8202N
IC = 20 A, VGE = 4.5 V −
NGB8202AN
gfs
IC = 6.0 A,
VCE = 5.0 V
CISS
COSS
CRSS
f = 10 kHz, VCE = 25 V
Temperature
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 25°C
Min Typ Max Unit
0.95 1.15 1.35
V
0.7 0.95 1.15
1.0 1.3 1.4
0.85 1.03 1.35
0.7 0.9 1.15
0.0 1.11 1.4
0.95 1.25 1.45
0.8 1.05 1.25
1.1 1.4 1.5
0.9 1.11 1.45
0.8 1.01 1.25
1.0 1.18 1.5
0.85 1.15 1.4
0.7 0.95 1.2
1.0 1.3 1.6*
1.0 1.3 1.6
0.8 1.05 1.4
1.1 1.4 1.7*
1.15 1.45 1.7
1.0 1.3 1.55
1.25 1.55 1.8*
1.3 1.6 1.9
1.2 1.5 1.8
1.4 1.75 2.0
1.1 1.4 1.9
1.2 1.5 1.8
1.3 1.42 2.0
10
18
25 Mhos
1100 1300 1500 pF
70
80
90
18
20
22
http://onsemi.com
3
Share Link: 