BSB013NE2LXI(2011) 데이터 시트보기 (PDF) - Infineon Technologies

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BSB013NE2LXI
(Rev.:2011)

n-Channel Power MOSFET

Infineon Technologies 

Table 14

13 Avalanche characteristics

OptiMOS™ Power-MOSFET

BSB013NE2LXI

Electrical characteristics diagrams

14 Typ. gate charge

IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)

Table 15

15 Typ drain-source leakage current

VGS=f(Qgate); ID=30 A pulsed; parameter: VDD

16 Gate charge waveforms

IDSS=f(VDS); VGS=0 V

Final Data Sheet

8

2.0, 2011-03-18

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