BSB008NE2LX 데이터 시트보기 (PDF) - Infineon Technologies
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BSB008NE2LX Datasheet PDF : 15 Pages
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OptiMOSTMPower-MOSFET,25V
BSB008NE2LX
Diagram13:Avalanchecharacteristics
102
100 °C
125 °C
101
100
100
101
102
tAV[µs]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
25 °C
Diagram14:Typ.gatecharge
10
9
8
5V
7
12 V
20 V
6
5
4
3
2
1
0
103
0
50
100
150
200
250
Qgate[nC]
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
28
Gate charge waveforms
27
26
25
24
23
22
21
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.0,2015-01-20
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