7M0680 데이터 시트보기 (PDF) - Fairchild Semiconductor

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7M0680

Fairchild Power Switch

Fairchild Semiconductor 

FS7M0880

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter

Symbol

Condition

Min. Typ. Max. Unit

Drain-Source Breakdown Voltage

BVDSS VGS=0V, ID=50µA

800 -

-

V

Zero Gate Voltage Drain Current

Static Drain-Source On Resistance (note1)

Forward Transconductance (note1)

IDSS

RDS(ON)

gfs

VDS=Max., Rating,

VGS=0V

VDS=0.8Max., Rating,

VGS=0V, TC=125°C

VGS=10V, ID=5.0A

VDS=15V, ID=5.0A

-

-

50 µA

-

- 200 µA

- 1.2 1.5 Ω

1.5 2.5 -

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Ciss

Coss

Crss

VGS=0V, VDS=25V,

f=1MHz

- 2460 -

- 210 - pF

-

64

-

Turn On Delay Time

Rise Time

Turn Off Delay Time

Fall Time

td(on)

tr

td(off)

tf

VDD=0.5BVDSS, ID=8.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

-

-

90

-

95 200

nS

- 150 450

-

60 150

Total Gate Charge

(Gate-Source+Gate-Drain)

Gate-Source Charge

Gate-Drain (Miller) Charge

Qg

VGS=10V, ID=8.0A,

VDS=0.5BVDSS (MOSFET

-

Qgs switching time are

-

essentially independent of

Qgd operating temperature)

-

- 150

20

-

nC

70

-

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2. S = -1--

R

3

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