P101W 데이터 시트보기 (PDF) - Vishay Semiconductors

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P101W

Passivated Assembled Circuit Elements, 25 A

Vishay Semiconductors 

P100 Series

Passivated Assembled Vishay High Power Products

Circuit Elements, 25 A

TRIGGERING

PARAMETER

Maximum peak gate power

Maximum average gate power

Maximum peak gate current

Maximum peak negative gate voltage

Maximum gate voltage

required to trigger

Maximum gate current

required to trigger

Maximum gate voltage

that will not trigger

Maximum gate current

that will not trigger

SYMBOL

PGM

PG(AV)

IGM

-VGM

VGT

IGT

VGD

IGD

TEST CONDITIONS

TJ = - 40 °C

TJ = 25 °C

TJ = 125 °C

TJ = - 40 °C

TJ = 25 °C

TJ = 125 °C

Anode supply =

6 V resistive load

TJ = 125 °C, rated VDRM applied

VALUES

8

2

2

10

3

2

1

90

60

35

0.2

2

UNITS

W

A

V

V

mA

V

mA

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction operating

and storage temperature range

TJ, TStg

- 40 to 125

°C

Maximum thermal resistance,

junction to case per junction

Maximum thermal resistance,

case to heatsink

RthJC

DC operation

RthCS Mounting surface, smooth and greased

2.24

K/W

0.10

Mounting torque, base to heatsink (1)

4

Nm

Approximate weight

58

g

2.0

oz.

Note

(1) A mounting compund is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound

Document Number: 93754

Revision: 03-Jun-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

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