P10NK80Z 데이터 시트보기 (PDF) - STMicroelectronics
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P10NK80Z
STMicroelectronics
P10NK80Z Datasheet PDF : 15 Pages
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STP10NK80ZFP - STP10NK80Z - STW10NK80Z
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20KΩ)
Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt(3) Peak diode recovery voltage slope
VISO Insulation withstand voltage (DC)
TJ
Operating junction temperature
Tstg
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤9A, di/dt ≤200A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX
Value
Unit
TO-220/ TO-247 TO-220FP
800
800
± 30
9
6
36
160
1.28
4
4.5
--
9(1)
6(1)
36(1)
40
0.32
2500
V
V
V
A
A
A
W
W/°C
KV
V/ns
V
-55 to 150
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220 TO-220FP TO-247
0.78
3.1
62.5
0.78 °C/W
50
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
9
A
290
mJ
3/15
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