MG1275H-XN2MM 데이터 시트보기 (PDF) - Littelfuse, Inc
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MG1275H-XN2MM Datasheet PDF : 5 Pages
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Power Module
1200V 75A IGBT Module
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min
Typ
Max
IGBT
VGE(th)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=3mA
5.0
5.8
6.5
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=75A, VGE=15V, TJ=25°C
IC=75A, VGE=15V, TJ=125°C
1.7
1.9
IICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
1
10
IGES
Gate Leakage Current
VCE=0V, VGE=±15V, TJ=125°C
-400
400
RGint
Integrated Gate Resistor
10
Qge
Gate Charge
VCE=600V, IC=75A , VGE=±15V
0.7
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
5.3
0.2
td(on)
Turn - on Delay Time
TJ=25°C
260
TJ=125°C
290
tr
Rise Time
VCC=600V
TJ=25°C
TJ=125°C
30
50
td(off)
Turn - off Delay Time
tf
Fall Time
IC=75A
RG =4.7Ω
VGE=±15V
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
420
520
70
90
Eon
Turn - on Energy
Inductive Load
TJ=25°C
TJ=125°C
6.6
9.4
Eoff
Turn - off Energy
TJ=25°C
6.8
TJ=125°C
8.0
ISC
Short Circuit Current
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
300
RthJC
Junction-to-Case Thermal Resistance (Per IGBT)
0.36
Diode
VF
tRR
IRRM
Erec
RthJCD
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
IF=75A, VGE=0V, TJ =25°C
IF=75A, VGE=0V, TJ =125°C
IF=75A, VR=600V
diF/dt=-1200A/µs
TJ=125°C
Junction-to-Case Thermal Resistance (Per Diode)
1.65
1.65
300
85
6.5
0.6
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
R25
B25/50
Parameters
Resistance
Test Conditions
Tc=25°C
Min
Typ
Max
5
3375
Unit
V
V
V
mA
mA
nA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
V
V
ns
A
mJ
K/W
Unit
KΩ
K
MG1275H-XN2MM
1294
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
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