STB120NF10 데이터 시트보기 (PDF) - STMicroelectronics

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STB120NF10

N-channel 100 V, 0.009 Ω, 110 A STripFET™ II Power MOSFET in TO-247, TO-220, D²PAK, TO-220FP

STMicroelectronics 

STB/F/PW120NF10

3

Test circuits

Test circuits

Figure 15. Switching times test circuit for

resistive load

Figure 16. Gate charge test circuit

VDD

VD

VGS

RG

PW

RL

2200

µF

D.U.T.

3.3

µF VDD

12V

47kΩ

1kΩ

100nF

Vi=20V=VGMAX

2200

µF

IG=CONST

2.7kΩ

100Ω

D.U.T.

VG

47kΩ

PW

AM01468v1

1kΩ

AM01469v1

Figure 17. Test circuit for inductive load

Figure 18. Unclamped inductive load test

switching and diode recovery times

circuit

G

25 Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100µH

B

3.3

B

µF

D

G

RG

S

1000

µF

VDD

Vi

L

VD

2200

3.3

µF

µF

VDD

ID

D.U.T.

Pw

AM01470v1

AM01471v1

Figure 19. Unclamped inductive waveform

V(BR)DSS

VD

Figure 20. Switching time waveform

ton

tdon

tr

toff

tdoff tf

VDD

IDM

ID

0

VDD

90%

10% VDS

90%

VGS

90%

10%

AM01472v1

0

10%

AM01473v1

Doc ID 9522 Rev 7

9/21

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