AM1011-075 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

일치하는 목록

AM1011-075

RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS

STMicroelectronics 

AM1011-075

RF & MICROWAVE TRANSISTORS

L-BAND AVIONICS APPLICATIONS

........ REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

10:1 VSWR CAPABILITY

LOW THERMAL RESISTANCE

INPUT/OUTPUT MATCHING

OVERLAY GEOMETRY

METAL/CERAMIC HERMETIC PACKAGE

POUT = 75 W MIN. WITH 9.2 dB GAIN

.400 x .400 2LFL (S036)

hermetically sealed

ORDER CODE

AM1011-075

BRANDING

1011-75

DESCRIPTION

The AM1011-075 device is a high power Class

C transistor specifically designed for L-Band

Avionics transponder/interrogator pulsed output

and driver applications.

This device is capable of operation over a wide

range of pulse widths, duty cycles, and tempera-

tures and is capable of withstanding 10:1 output

VSWR at rated RF conditions. Low RF thermal

resistance and computerized automatic wire bond-

ing techniques ensure high reliability and product

consistency.

The AM1011-075 is supplied in the AMPAC™ Her-

metic Metal/Ceramic package with internal

Input/Output matching structures.

PIN CONNECTION

1. Collector

2. Base

3. Emitter

4. Base

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symb ol

Pa ra met er

PDISS

Power Dissipation* (TC ≤ 100°C)

IC

Device Current*

VCC

Collector-Supply Voltage*

TJ

Junction Temperature (Pulsed RF Operation)

TSTG

Storage Temperature

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

September 1992

Value

Unit

175

W

5.4

A

55

V

250

°C

− 65 to +200

°C

0.86

°C/W

1/4

Share Link: