DG9053DQ-T1-E3 데이터 시트보기 (PDF) - Vishay Semiconductors
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DG9053DQ-T1-E3
Vishay Semiconductors
DG9053DQ-T1-E3 Datasheet PDF : 13 Pages
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DG9051, DG9052, DG9053
Vishay Siliconix
SPECIFICATIONS (Dual Supply V + = 5 V, V - = - 5 V)
Parameter
Analog Switch
Symbol
Test Condition
Unless Otherwise Specified
V + = 5 V, V - = - 5 V ± 10 %
VA, VEN = 0.8 V or 2 Vf
Limits
- 40 °C to 85°C
Temp.b Min.c Typ.d Max.c Unit
Analog Signal Rangee
VANALOG
Full
-5
5
V
On-Resistance
RON
V + = 4.5 V, V - = - 4.5 V, VD = ± 3 V, IS = 1 mA Room
Sequence Each Switch On
Full
35
55
60
RON Match Between Channelsg
On-Resistance Flatnessi
RON
RON
Flatness
V + = 4.5 V, V - = - 4.5 V, VD = ± 3 V, IS = 1 mA
Room
Room
5
7
10
Switch Off Leakage Currenta
IS(off)
ID(off)
V + = 5.5 V, V - = - 5.5 V
VEN = 2 V, VD = ± 4 .5 V, VS = ± 4.5 V
Room - 1
Full
- 20
Room - 1
Full
- 20
1
20
1
20
nA
Channel On Leakage Currenta
ID(on)
V + = 5.5 V, V - = - 5.5 V
VEN = 0 V, VD = ± 4.5 V, VS = ± 4.5 V
Room - 2
Full
- 10
2
10
Digital Control
Logic High Input Voltage
Logic Low Input Voltage
VINH
VINL
Full
2
Full
V
0.8
Input Currenta
IIN
VAX = VEN = 2 V or 0.8 V
Full
-1
1
µA
Dynamic Characteristics
Transition Timee
Break-Before-Make Timee
Enable Turn-On Timee
Enable Turn-Off Timee
tTRANS
V + = 4.5 V, V - = - 4.5 V VNO/NC = ± 3 V,
RL = 300 , CL = 35 pF
Room
Full
tBBM
Room
5
Full
tON(EN)
VX,Y, Z = +/- 3 V, VS = 0 V,
RL = 300 , CL = 35 pF
Room
Full
tOFF(EN)
Room
Full
35
50
65
12
ns
38
55
70
22
35
50
Source Off Capacitancee
CS(off)
f = 1 MHz, VS = 0 V, VEN = 2 V
Room
5
Drain Off Capacitancee
CD(off)
f = 1 MHz, VD = 0 V, VEN = 2 V
Room
9
pF
Drain On Capacitancee
CD(on)
f = 1 MHz, VD = 0 V, VEN = 0 V
Room
13
Power Supply
I+
Power Supply Current
I-
VEN = VA = 0 V or V +
Room
Room - 1
1
µA
www.vishay.com
Document Number: 73410
4
S11-1066-Rev. B, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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