FDB86360_F085 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
일치하는 목록
FDB86360_F085 Datasheet PDF : 6 Pages
| |||
Typical Characteristics
1000
100
100us
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
1ms
10ms
100ms
TC = 25oC
0.1
1
10
100 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
1000
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.001 0.01 0.1 1 10 100 1000 10000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
200
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
150 VDD = 5V
TJ = 175oC
100
TJ = 25oC
50
TJ = -55oC
0
3
4
5
6
7
8
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
200
100
VGS = 0 V
10
TJ = 175 oC
1
TJ = 25 oC
0.1
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Forward Diode Characteristics
200
150
100
80μs PULSE WIDTH
Tj=25oC
VGS
15V Top
10V
8V
7V
6V
5.5V Bottom
50
5.5V
0
0.0
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
200
150
100
VGS
15V Top
10V
8V 5.5V
7V
6V
5.5V
5V Bottom
50
5V
80μs PULSE WIDTH
Tj=175oC
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Saturation Characteristics
FDB86360_F085 Rev. C2
4
www.fairchildsemi.com
Share Link: 