11N60S5(2009) 데이터 시트보기 (PDF) - Infineon Technologies

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11N60S5
(Rev.:2009)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP11N60S5

SPI11N60S5

Maximum Ratings

Parameter

Drain Source voltage slope

VDS = 480 V, ID = 11 A, Tj = 125 °C

Symbol

dv/dt

Value

20

Unit

V/ns

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s

Symbol

RthJC

RthJA

RthJA

Tsold

Values

Unit

min. typ. max.

-

-

1 K/W

-

-

62

-

-

62

-

35

-

-

- 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600

-

Drain-Source avalanche

V(BR)DS VGS=0V, ID=11A

- 700

breakdown voltage

-V

-

Gate threshold voltage

Zero gate voltage drain current

VGS(th) ID=500µΑ, VGS=VDS 3.5

IDSS

VDS=600V, VGS=0V,

Tj=25°C,

-

Tj=150°C

-

4.5 5.5

µA

-

25

- 250

Gate-source leakage current

IGSS

Drain-source on-state resistance RDS(on)

VGS=20V, VDS=0V

VGS=10V, ID=7A,

Tj=25°C

Tj=150°C

-

- 100 nA

Ω

- 0.34 0.38

- 0.92 -

Gate input resistance

RG

f=1MHz, open Drain

-

29

-

Rev. 2.7

Page 2

2009-11-30

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