STTH200L04TV1(2006) 데이터 시트보기 (PDF) - STMicroelectronics
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STTH200L04TV1 Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STTH200L04TV1
Table 2. Thermal resistance
Symbol
Parameter
Value (max).
Rth(j-c) Junction to case
Per diode
0.50
Total
0.30
Rth(c) Coupling
0.10
When diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Unit
°C/W
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ Max.
Unit
IR(1)
Reverse leakage
current
Tj = 25° C
VR = VRRM
Tj = 125° C
100
µA
100 1000
VF(2) Forward voltage drop
Tj = 25° C
IF = 100 A
Tj = 150° C
1.2
V
0.83 1.0
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.8 x IF(AV) + 0.0033 IF2(RMS)
Table 4.
Symbol
Dynamic characteristics (per diode)
Parameter
Test conditions
Min Typ Max Unit
trr
IRM
Sfactor
tfr
VFP
Reverse recovery
time
Reverse recovery
current
Softness factor
Forward recovery
time
Forward recovery
voltage
Tj = 25° C
IF = 1 A dIF/dt = 50 A/µs
VR = 30 V
IF = 1 A dIF/dt = 200 A/µs
VR = 30 V
Tj = 125° C
IF = 100 A VR = 200 V
dIF/dt = 100 A/µs
Tj = 125° C
IF = 100 A VR = 200 V
dIF/dt = 100 A/µs
Tj = 25° C
IF = 100 A dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
Tj = 25° C
IF = 100 A dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
75 100
ns
45 60
18 A
0.4
800 ns
2.6
V
2/7
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