GL382 데이터 시트보기 (PDF) - Sharp Electronics
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GL382 Datasheet PDF : 3 Pages
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GL382
GL382
IrDA-Based SIR System-Conforming
Infrared Emitting Diode
s Features
1. Compact 3 φ resin mold package
2. Peak emitting wavelength conforming to SIR system based on IrDA
( λ p=880 nm [I F=50mA])
3. Narrow beam angle
(Half intensity angle : TYP. ± 17˚ )
4. High speed response
(Cut-off frequency fc : TYP.12MHz)
s Applications
1. Portable information terminal equipment
2. Personal computers
3. Printers
s Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Forward current
*1 Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2 Soldering temperature
Symbol Rating Unit
IF
60
mA
I FM
0.5
A
VR
4
V
T opr - 25 to + 85 ˚C
T stg - 40 to + 85 ˚C
T sol
260
˚C
s Outline Dimensions
φ 3.0 ± 0.15
φ 3.8
2
-
0.5
+
-
0.15
0.1
(2.54)
(Unit : mm)
1
2
1 Anode
2 Cathode
1
2
* Tolerance : ± 0.2mm
*1 Pulse width <= 100µ s, Duty ratio=0.01
*2 For 3 seconds at the position of 2.6 mm from the resin edge
s Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
TYP. MAX.
Forward voltage
VF
IF = 50mA
-
1.5
1.7
Peak forward voltage
V FM
IFM = 0.5A
-
2.2
3.8
Reverse voltage
*3 Radiant intensity
Peak emission wavelength
IR
V R = 3V
IE
IF = 50mA
λP
IF = 50mA
-
-
10
6
18
-
-
880
-
Half intensity wavelength
∆λ
IF = 50mA
-
40
-
Response frequency
Half intensity angle
fC
IF=50mA+10mAp-p
-
12
-
∆θ
IF = 20mA
-
± 17
-
*3 I E : Value obtained by converting the value in power of radiant fluxes emitted at the solid angle of 0.01 sr (steradian) in the direction of mechanical axis of
the lens portion into 1 sr or all those emitted from the light emitting diode.
(Ta=25 ˚C)
Unit
V
V
µA
mW/sr
nm
nm
MHz
˚
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
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