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C3503F 데이터 시트보기 (PDF) - Fairchild Semiconductor

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C3503F
Fairchild
Fairchild Semiconductor Fairchild
C3503F Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SC3503/KSC3503
NPN Epitaxial Silicon Transistor
Applications
• Audio, Voltage Amplifier and Current Source
• CRT Display, Video Output
• General Purpose Amplifier
Features
• High Voltage : VCEO= 300V
• Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V
• Excellent Gain Linearity for low THD
• High Frequency: 150MHz
• Full thermal and electrical Spice models are available
• Complement to 2SA1381/KSA1381.
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
BVCBO
Collector-Base Voltage
BVCEO
Collector-Emitter Voltage
BVEBO
Emitter-Base Voltage
IC
Collector Current(DC)
ICP
Collector Current(Pulse)
PC
Total Device Dissipation, TC=25°C
TC=125°C
TJ, TSTG
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
March 2008
1
TO-126
1. Emitter 2.Collector 3.Base
Ratings
300
300
5
100
200
7
1.2
- 55 ~ +150
Units
V
V
V
mA
mA
W
W
°C
Max.
17.8
Units
°C/W
hFE Classification
Classification
hFE
C
40 ~ 80
D
60 ~ 120
E
100 ~ 200
F
160 ~ 320
© 2008 Fairchild Semiconductor Corporation
2SC3503/KSC3503 Rev. A1
1
www.fairchildsemi.com

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