2N5307_D74Z 데이터 시트보기 (PDF) - Fairchild Semiconductor
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2N5307_D74Z Datasheet PDF : 4 Pages
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2N5307
NPN General Purpose Amplifier
• This device designed for applications requiring extremely high current
gain at currents to 1.0A.
• Sourced from Process 05.
• See MPSA14 for characteristics.
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TST
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
40
40
12
1.2
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
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