200HF40PVL1 데이터 시트보기 (PDF) - Vishay Semiconductors
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200HF40PVL1 Datasheet PDF : 6 Pages
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200HF..L
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 200 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
IF(AV) 180° conduction, half sine wave
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
Maximum I2t for fusing
Maximum I2√t for fusing
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
IF(RMS)
IFSM
I2t
I2√t
VF(TO)1
rf1
VFM
DC at 115 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
Ipk = 628 A, TJ = 25 °C
VALUES
200
125
314
3570
3740
3000
3140
64
58
45
41
640
0.73
0.48
1.12
UNITS
A
°C
A
kA2s
kA2√s
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case
TStg
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS Mounting surface, smooth, flat and greased
Maximum allowed mounting torque
+ 0 - 20 %
Not lubricated threads
lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
- 40 to 180
°C
- 55 to 180
0.25
K/W
0.08
11
N·m
10
120
g
DO-205AC (DO-30)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93500
Revision: 28-May-08
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