NTE916 데이터 시트보기 (PDF) - NTE Electronics

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NTE916

Integrated Circuit High Current, NPN Transistor Array, Common Emitter

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector–Base Breakdown Voltage

Collector–Substrate Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

DC Forward Current Transfer Ratio

Base–Emitter Saturation Voltage

Collector–Emitter Saturation Voltage

Collector Cutoff Current

V(BR)CES IC = 500µA, IE = 0

V(BR)CIO ICI = 500µA, IE = 0, IB = 0

V(BR)CEO IC = 1mA, IB = 0

V(BR)EBO IC = 500µA

hFE VCE = 500mV, IC = 30mA

VCE = 800mV, IC = 50mA

VBE(sat) IC = 30mA, IB = 1mA

VCE(sat) IC = 30mA, IB = 1mA

IC = 50mA, IB = 5mA

ICEO VCE = 10V, IB = 0

ICBO VCB = 10V, IE = 0

Pin Connection Diagram

Collector Q1 1

Collector Q2 2

Base Q2 3

Collector Q5 4

Substrate 5

Base Q5 6

Collector Q7 7

Base Q7 8

16 Base Q1

15 Common Emitter

14 Collector Q3

13 Base Q3

12 Collector Q4

11 Base Q4

10 Base Q6

9 Collector Q6

Min Typ Max Unit

20 60 – V

20 60 – V

16 24 – V

5.0 6.9 – V

30 68 –

40 70 –

– 0.87 1.0 V

– 0.27 0.5 V

– 0.4 0.7 V

– – 10 µA

– – 1 µA

16

9

.260 (6.6) Max

1

8

.245

(6.22)

Min

.785 (19.9)

Max

.100 (2.54)

.700 (17.7)

.200 (5.08)

Max

.300

(7.62)

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