NTE912 데이터 시트보기 (PDF) - NTE Electronics

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NTE912

Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially–Connected Transistor Pair)

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ

Dynamic Characteristics (Cont’d)

Gain–Bandwidth Product

Emitter Base Capacitance

Collector Base Capacitance

Collector Substrate Capacitance

fT

VCE = 3V, IC = 3mA

CEB VEB = 3V, IE = 0

CCB VCB = 3V, IC = 0

CCI VCS = 3V, IC = 0

300 550

–

0.6

–

0.58

–

2.8

Max Unit

–

– pF

– pF

– pF

Pin Connection Diagram

Q1 Vout 1

Q1 Vin 2

Q1/Q2 Vin 3

Q2 Bias 4

Q2 Vin 5

Q3 Vin 6

Q3 Vin 7

14 Q5 Vout

13 Substrate/Q5 Vin

12 Q5 Vin

11 Q4 Vout

10 Q4 Vin

9 Q4 Vin

8 Q3 Vout

14

8

1

7

.785 (19.95)

Max

.200 (5.08)

Max

.300

(7.62)

.100 (2.45)

.600 (15.24)

.099 (2.5) Min

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