NTE858M 데이터 시트보기 (PDF) - NTE Electronics

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NTE858M

Integrated circuit. Dual, low - noise JFET - input operational amplifier.

NTE Electronics 

Electrical Characteristics: (VCC = +15V, VEE = –15V, TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Input Offset Voltage

Average Temperature

Coefficient of Input Offset

Voltage

VIO RS ≤ 10k,

–

VCM = 0

TA = 0 to +70°C –

∆VIO/∆T TA = 0 to +70°C

–

3

10 mV

–

13 mV

10

– µV/°C

Input Offset Current

Input Bias Current

Input Resistance

Common Mode Input Voltage

Range

IIO VCM = 0,

Note 3

IIB VCM = 0,

Note 3

ri

VICR

–

5

50 pA

TA = 0 to +70°C –

–

–

2 nA

30 200 pA

TA = 0 to +70°C –

–

7 nA

–

1012

–

Ω

±10 +15, –12 –

V

Large–Signal Voltage Gain

AVOL VO = ±10V,

25 150

RL ≤ 2k

TA = 0 to +70°C 15

–

– V/mV

– V/mV

Output Voltage Swing

(Peak–to–Peak)

VO RL = 10k

24 28

–

V

RL ≥ 10k TA = 0 to +70°C 24

–

–

V

RL ≥ 2k

20

–

–

V

Common Mode Rejection Ratio CMRR RS ≤ 10k

70 100 – dB

Supply Voltage Rejection Ratio PSRR RS ≤ 10k

70 100 – dB

Supply Current (Each Amplifier) ID

–

1.4 2.5 mA

Unity Gain Bandwidth

BW

–

4

– MHz

Slew Rate

SR VIN = 10V, RL = 2k, CL = 100pF –

13

– V/µs

Rise Time

tr

–

0.1

–

µs

Overshoot Factor

VIN = 20mV, RL = 2k,

CL = 100pF

–

10

–

%

Equivalent Input Noise Voltage

en RS = 100Ω, f = 1000Hz

–

18

– nV/√Hz

Equivalent Input Noise Current

in RS = 100Ω, f = 1000Hz

– 0.01 – pA/√Hz

Total Harmonic Distortion

THD VO(RMS) = 10V, RS ≤ 1k,

RL ≥ 2k, f = 1000Hz

– 0.01 – %

Channel Separation

AV = 100

– 120 – dB

Note 3. Input Bias currents of JFET input operational amplifiers approximately double for every 10°C

rise in Junction Temperature. To maintain Junction Temperature as close to Ambient Tem-

perature as possible, pulse techniques must be used during test.

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