1N3879(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors

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1N3879
(Rev.:2008)

Fast Recovery Diodes (Stud Version), 6/12/16 A

Vishay Semiconductors 

1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Fast Recovery Diodes Vishay High Power Products

(Stud Version), 6/12/16 A

RECOVERY CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum reverse

recovery time

trr

Maximum peak

recovery current

IRM(REC)

Maximum reverse

recovery charge

Qrr

Note

(1) JEDEC registered values

TJ = 25 °C, IF = 1 A to VR = 30 V,

dIF/dt = 100 A/µs

TJ = 25 °C, dIF/dt = 25 A/µs,

IFM = π x rated IF(AV)

IFM = π x rated IF(AV)

TJ = 25 °C, IF = 1 A to VR = 30 V,

dIF/dt = 100 A/µs

TJ = 25 °C, dIF/dt = 25 A/µs,

IFM = π x rated IF(AV)

1N3879. 1N3889.

1N3883. 1N3893.

150

150

300 (1) 300 (1)

4 (1)

5 (1)

400

350

400

400

6FL..

12FL..

16FL..

S02 S05

-

-

200 500

-

-

-

-

-

UNITS

ns

-

nC

IFM

trr

dir

t

dt

Qrr

IRM(REC)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction operating

temperature range

Maximum storage temperature range

Maximum thermal resistance,

junction to case

Maximum thermal resistance,

case to heatsink

Allowable mounting torque

TJ

TStg

RthJC

RthCS

DC operation

Mounting surface, smooth,

flat and greased

Not lubricated threads

Lubricated threads

Approximate weight

Case style

JEDEC

1N3879.

1N3883.

6FL..

1N3889.

1N3893.

12FL..

16FL..

- 65 to 150

- 65 to 175

2.5

2.0

1.6

0.5

1.5 + 0 - 10 %

(13)

1.2 + 0 - 10 %

(10)

7

0.25

DO-203AA (DO-4)

UNITS

°C

°C/W

N·m

(lbf · in)

g

oz.

Document Number: 93138

Revision: 26-Sep-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

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