NTE2011 데이터 시트보기 (PDF) - NTE Electronics

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NTE2011

Integrated Circuit 7–Channel Darlington Array/Driver

NTE Electronics 

Electrical Characteristics: (TA = +25° unless otherwise specified)

Parameter

Symbol Device

Test Conditions

Output Leakage Current

Collector–Emitter

Saturation Voltage

ICEX

VCE(sat)

All VCE = 50V, TA = +25°C

VCE = 50V, TA = +70°C

NTE2012 VCE = 50V, TA = +70°C, VIN = 6V

NTE2014 VCE = 50V, TA = +70°C, VIN = 1V

NTE2011 IC = 100mA, IB = 250µA

NTE2013

NTE2014

IC = 200mA, IB = 350µA

IC = 350mA, IB = 500µA

NTE2012 IC = 200mA, IB = 350µA

NTE2015 IC = 350mA, IB = 500µA

IC = 500mA, IB = 600µA

Input Current

IIN(ON)

NTE2012 VIN = 17V

NTE2013 VIN = 3.85V

NTE2014 VIN = 5V

VIN = 12V

Input Voltage

IIN(OFF)

VIN(ON)

NTE2015 VIN = 3V

All IC = 500µA, TA = +70°C

NTE2012 VCE = 2V, IC = 500mA

NTE2013 VCE = 2V, IC = 200mA

VCE = 2V, IC = 250mA

VCE = 2V, IC = 300mA

NTE2014 VCE = 2V, IC = 125mA

VCE = 2V, IC = 200mA

VCE = 2V, IC = 275mA

VCE = 2V, IC = 350mA

NTE2015 VCE = 2V, IC = 350mA

DC Forward Current

Transfer Ratio

hFE NTE2011 VCE = 2V, IC = 350mA

Input Capacitance

CIN

All

Turn–On Delay

tPLH

All 0.5 Ein to 0.5 Eout

Turn–Off Delay

Clamp Diode Leakage

Current

tPHL

All 0.5 Ein to 0.5 Eout

IR

All VR = 50V, TA = +25°C

VR = 50V, TA = +70°C

Clamp Diode Forward Voltage

VF

All IF = 350mA

Min Typ

–

–

–

–

–

–

–

–

– 0.9

– 1.1

– 1.3

– 1.1

– 1.3

– 1.7

– 0.82

– 0.93

– 0.35

– 1.0

– 1.5

50 60

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

1000 –

– 15

– 0.25

– 0.25

–

–

–

–

– 1.7

Max Unit

50 µA

100 µA

500 µA

500 µA

1.1 V

1.3 V

1.6 V

1.3 V

1.6 V

1.9 V

1.25 mA

1.35 mA

0.50 mA

1.45 mA

2.4 mA

– µA

17 V

2.4 V

2.7 V

3.0 V

5.0 V

6.0 V

7.0 V

8.0 V

2.6 V

–

25 pF

1.0 µs

1.0 µs

50 µA

100 µA

2.0 V

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