FDD120AN15A0_F085 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDD120AN15A0_F085 Datasheet PDF : 6 Pages
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Typical Characteristics
100
10
100us
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
SINGLE PULSE
TJ = MAX RATED
1ms
10ms
100ms
0.01
TC = 25oC
1
10
100
500
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
30
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
25
VDD = 15V
20
15
10
TJ = 25oC
5
TJ = 175oC
TJ = -55oC
0
2
3
4
5
6
7
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
50
VGS = 0 V
10
TJ = 175 oC
1
TJ = 25 oC
0.1
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Forward Diode Characteristics
30
24
VGS
15V Top
10V
8V
18
7V
6V
5.5V
5V Bottom
12
5V
6
80μs PULSE WIDTH
Tj=25oC
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
18
15
VGS
15V Top
12
10V
8V 5.5V
5V 7V
6V
9
5.5V
5V Bottom
6
3
80μs PULSE WIDTH
Tj=175oC
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Saturation Characteristics
FDD120AN15A0_F085 Rev. C1
4
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