BR93LL46FV 데이터 시트보기 (PDF) - ROHM Semiconductor
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BR93LL46FV Datasheet PDF : 11 Pages
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Memory ICs
4) When the µ-COM port is the open drain port
When the µ-COM port is the open drain output port, it
responds through software as shown in Figure 8. This
method will not work during CMOS input and output.
The timing which becomes a problem (production of
feedthrough current paths) for the open drain port only
occurs when CS is HIGH after a write command. Feed-
through current paths can occur in the period between
the rise of the CS to the input of the start bit. If CS rises
before the start bit, as shown in Figure 8, and DI is
HIGH at the same time, current paths are not created.
Make sure to set SK to LOW during a CS rise.
In this case, however, the first SK rise after the CS
rises is interpreted as the start bit. Therefore, caution is
required. Figure 9 shows a timing chart from the end of
a write command to the next command input. As
shown in the figure, after completion of the write com-
mand input, when CS rises, set SK to LOW and stop
the SK input. Otherwise, if DO is HIGH when a clock
pulse is input, this is taken as the start bit and may
cause erroneous operation.
CS
SK
BR93LL46F / BR93LL46FV
CS
SK
1234
DI
DO
High-Z
Start bit
Fig. 8 Using an open drain port
DI
D1 D0
DO
High-Z
DI
DO
D1 D0
Write command
BUSY
BUSY
READY
READY
Status detection
High-Z
Command input
∗ DI: EEPROM DI terminal; DO: EEPROM DO output; DI / DO: µ-COM I / O terminal
Fig. 9 Timing diagram chart
10
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