IGW25N120H3 데이터 시트보기 (PDF) - Infineon Technologies

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IGW25N120H3

High speed switching series third generation

Infineon Technologies 

IGW25N120H3

High speed switching series third generation

High speed IGBT in Trench and Fieldstop technology

recommended in combination with SiC Diode IDH15S120

Features:

TRENCHSTOPTM technology offering

• best in class switching performance: less than 500µJ total

switching losses achievable

• very low VCEsat

• low EMI

• maximum junction temperature 175°C

• qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• complete product spectrum and PSpice Models:

http://www.infineon.com/igbt/

Applications:

• solar inverters

• uninterruptible power supplies

• welding converters

• converters with high switching frequency

C

G

E

Key Performance and Package Parameters

Type

V†Š

I† V†ŠÙÈÚ, TÝÎ=25°C TÝÎÑÈà

IGW25N120H3

1200V 25A

2.05V

175°C

Marking

G25N120H3

Package

PG-TO247-3

2

Rev. 1.1, 2011-01-25

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