G25N120H3(2014) 데이터 시트보기 (PDF) - Infineon Technologies

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G25N120H3
(Rev.:2014)

High speed switching series third generation

Infineon Technologies 

IGW25N120H3

Highspeedswitchingseriesthirdgeneration

Maximumratings

Parameter

Collector-emitter voltage

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

Pulsedcollectorcurrent,tplimitedbyTvjmax

TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C

Gate-emitter voltage

Short circuit withstand time

VGE=15.0V,VCC≤600V

Allowed number of short circuits < 1000

Time between short circuits: ≥ 1.0s

Tvj=175°C

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Operating junction temperature

Storage temperature

Soldering temperature,

wave soldering 1.6 mm (0.063 in.) from case for 10s

Mounting torque, M3 screw

Maximum of mounting processes: 3

Symbol

VCE

IC

ICpuls

-

VGE

tSC

Ptot

Tvj

Tstg

M

Value

Unit

1200

V

50.0

A

25.0

100.0

A

100.0

A

±20

V

µs

10

326.0

156.0

W

-40...+175

°C

-55...+150

°C

260

°C

0.6

Nm

ThermalResistance

Parameter

Characteristic

IGBT thermal resistance,

junction - case

Thermal resistance

junction - ambient

Symbol Conditions

Rth(j-c)

Rth(j-a)

Max.Value

Unit

0.46

K/W

40

K/W

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Parameter

Symbol Conditions

StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES

Collector-emitter saturation voltage VCEsat

Gate-emitter threshold voltage

VGE(th)

Zero gate voltage collector current ICES

Gate-emitter leakage current

IGES

Transconductance

gfs

VGE=0V,IC=0.50mA

VGE=15.0V,IC=25.0A

Tvj=25°C

Tvj=125°C

Tvj=175°C

IC=0.85mA,VCE=VGE

VCE=1200V,VGE=0V

Tvj=25°C

Tvj=175°C

VCE=0V,VGE=20V

VCE=20V,IC=25.0A

Value

Unit

min. typ. max.

1200 -

-V

-

-

2.05 2.40

2.50 -

V

- 2.70 -

5.0 5.8 6.5 V

-

- 250.0 µA

-

- 2500.0

-

- 600 nA

- 13.0 - S

4

Rev.2.1,2014-02-27

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