IKW25N120H3 데이터 시트보기 (PDF) - Infineon Technologies

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IKW25N120H3

1200V high speed switching series third generation

Infineon Technologies 

IKW25N120H3

Highspeedswitchingseriesthirdgeneration

12

Eoff

Eon

Ets

10

8

6

4

2

7

Eoff

Eon

Ets

6

5

4

3

2

1

0

5

15

25

35

45

IC,COLLECTORCURRENT[A]

Figure 13. Typicalswitchingenergylossesasa

functionofcollectorcurrent

(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,

rG=23Ω,testcircuitinFig.E)

0

5

15

25

35

45

55

65

rG,GATERESISTOR[Ω]

Figure 14. Typicalswitchingenergylossesasa

functionofgateresistor

(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,

IC=25A,testcircuitinFig.E)

Eoff

Eon

4

Ets

6

Eoff

Eon

Ets

5

3

4

3

2

2

1

1

0

0 25 50 75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

0

400

500

600

700

800

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 15. Typicalswitchingenergylossesasa

functionofjunctiontemperature

(indload,VCE=600V,VGE=15/0V,IC=25A,

rG=23Ω,testcircuitinFig.E)

Figure 16. Typicalswitchingenergylossesasa

functionofcollectoremittervoltage

(ind.load,Tj=175°C,VGE=15/0V,IC=25A,

rG=23Ω,testcircuitinFig.E)

10

Rev.2.1,2014-12-01

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