NTE3320 데이터 시트보기 (PDF) - NTE Electronics

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NTE3320

Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch

NTE Electronics 

NTE3320

Insulated Gate Bipolar Transistor

N–Channel Enhancement Mode,

High Speed Switch

Features:

D High Input Impedance

D High Speed

D Low Saturation Voltage

D Enhancement Mode

Applications:

D High Power Switching

Absolute Maximum Raings: (TA = +25°C unless otherwise specified)

Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Gate–Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V

Collector Current, IC

DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A

Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A

Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.625°C/W

Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8Nm

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Gate Leakage Current

Collector Cutoff Current

IGES

ICES

VGE = ±20V, VCE = 0

VCE = 600V, VGE = 0

Collector–Emitter Breakdown Voltage V(BR)CES IC = 2mA, VGE = 0

Gate–Emitter Cutoff Voltage

VGE(off) IC = 50mA, VCE = 5V

Collector–Emitter Saturation Voltage

Input Capacitance

Rise Time

Turn–On Time

VCE(sat)

Cies

tr

ton

IC = 50A, VGE = 15V

VCE = 10V, VGE = 0, f = 1MHz

VCC = 300V

Fall Time

tf

Turn–Off Time

toff

Min Typ Max Unit

–

– ±500 nA

–

– 1.0 mA

600 –

–

V

3.0 – 6.0 V

– 3.0 4.0 V

– 3500 – pF

– 0.30 0.60 µs

– 0.40 0.80 µs

– 0.15 0.35 µs

– 0.50 1.00 µs

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