B764 데이터 시트보기 (PDF) - Unspecified

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B764

PNP silicon

Unspecified 

风　光　欣　技　术　资　料

APPLICATION：Voltage Regulator, Relay Lamp Driver

Electrical Equipment Applications.

MAXIMUM RATINGS（Ta＝25℃）

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL RATING UNIT

VCBO

-60

V

VCEO

-50

V

VEBO

-5

V

IC

-1

A

PC

900

mW

TJ

150

℃

Tstg

﹣55~150 ℃

B764

—PNP silicon —

ELECTRICAL CHARACTERISTICS（Ta=25℃）

PARAMETER

SYMBOL MIN.

TYP. MAX. UNIT

TEST CONDITION

DC Current Gain

hFE

60

320

VCE= -2 V，Ic= -50 mA

Collector Cut-off Current

ICBO

-1

µA

VCB= -50 V，IE=0

Emitter Cut-off Current

IEBO

-1

µA

VEB= -4 V，Ic=0

Collector-Base Breakdown Voltage BVCBO

-60

V

Ic= -10 µA，IE=0

Collector-Emitter Breakdown VoltageBVCEO

-50

V

Ic= -1 mA，IB=0

Emitter-Base Breakdown Voltage BVEBO

-5

V

IE= -10 µA，Ic=0

Collector-Emitter Saturation Voltage VCE(sat)

-0.2 -0.7 V

Ic= -500 mA，IB= -50 mA

Base-Emitter Saturation Voltage

VBE(sat)

-0.85 -1.2 V

Ic= -500 mA，IB= -50 mA

Gain bandwidth product

fT

150

MHz Ic= -50mA，VCE= -10 V

Common Base Output Capacitance Cob

20

PF

VCB= -10 V, IE=0, f = 1 MHz

hFE Classification

Classification

hFE

D

60～120

E

100～200

F

160～320

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