IRG4BC10UD 데이터 시트보기 (PDF) - International Rectifier

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IRG4BC10UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC10UD

 1.4 RG = 1O0h0mΩ

T J = 150° C

1.2 VCC = 480V

VGE = 15V

1.0

 100 VGE = 20V

T J = 125 oC

0.8

10

0.6

0.4

0.2

0.0

0

2

4

6

8

I C , Collector-to-emitter Current (A)

SAFE OPERATING AREA

1

10

1

10

100

1000

VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

Fig. 12 - Turn-Off SOA

10

TJ = 150°C

TJ = 125°C

TJ = 25°C

1

0.1

0.0 1.0 2.0 3.0 4.0 5.0 6.0

FFoorrwwaarrdd VVoollttaaggeeDDrroopp-- VVFMF M(( VV) )

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6

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