IRG4PC30SPBF 데이터 시트보기 (PDF) - International Rectifier

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IRG4PC30SPBF

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

International Rectifier 

IRG4PC30SPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)CES

V(BR)ECS

∆V(BR)CES/∆TJ

VCE(ON)

VGE(th)

∆VGE(th)/∆TJ

gfe

ICES

IGES

Parameter

Collector-to-Emitter Breakdown Voltage

Emitter-to-Collector Breakdown Voltage „

Temperature Coeff. of Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

Temperature Coeff. of Threshold Voltage

Forward Transconductance …

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Min.

600

18

—

—

—

—

3.0

—

6.0

—

—

—

—

Typ.

—

—

0.75

1.40

1.84

1.45

—

-11

11

—

—

—

—

Max. Units

Conditions

—

V VGE = 0V, IC = 250µA

—

V VGE = 0V, IC = 1.0A

— V/°C VGE = 0V, IC = 1.0mA

1.6

IC = 18A

VGE = 15V

—

V

IC = 34A

See Fig.2, 5

—

IC = 18A , TJ = 150°C

6.0

VCE = VGE, IC = 250µA

— mV/°C VCE = VGE, IC = 250µA

—

S VCE = 100V, IC = 18A

250 µA VGE = 0V, VCE = 600V

2.0

VGE = 0V, VCE = 10V, TJ = 25°C

1000

VGE = 0V, VCE = 600V, TJ = 150°C

±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

td(on)

tr

td(off)

tf

Ets

LE

Cies

Coes

Cres

Notes:

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min.

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ. Max.

50 75

7.3 11

17 26

22 —

18 —

540 810

390 590

0.26 —

3.45 —

3.71 5.6

21 —

19 —

790 —

760 —

6.55 —

13 —

1100 —

72 —

13 —

Units

nC

ns

mJ

ns

mJ

nH

pF

Conditions

IC = 18A

VCC = 400V

See Fig. 8

VGE = 15V

TJ = 25°C

IC = 18A, VCC = 480V

VGE = 15V, RG = 23Ω

Energy losses include "tail"

See Fig. 9, 10, 14

TJ = 150°C,

IC = 18A, VCC = 480V

VGE = 15V, RG = 23Ω

Energy losses include "tail"

See Fig. 11, 14

Measured 5mm from package

VGE = 0V

VCC = 30V

See Fig. 7

ƒ = 1.0MHz

 Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,

(See fig. 13a)

ƒ Repetitive rating; pulse width limited by maximum

junction temperature.

„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.

… Pulse width 5.0µs, single shot.

2

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