BC817SU(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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BC817SU
(Rev.:2008)

NPN Silicon AF Transistor

Infineon Technologies 

BC817SU

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

Collector-base breakdown voltage

IC = 10 µA, IE = 0

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector-base cutoff current

VCB = 25 V, IE = 0

VCB = 25 V, IE = 0 , TA = 150 °C

Emitter-base cutoff current

VEB = 4 V, IC = 0

DC current gain1)

IC = 100 mA, VCE = 1 V

IC = 500 mA, VCE = 1 V

V(BR)CEO 45

-

-V

V(BR)CBO 50

-

-

V(BR)EBO 5

-

-

I CBO

I EBO

µA

-

-

0.1

-

-

50

-

- 100 nA

hFE

-

160 250 400

40

-

-

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

Base emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

-

-

0.4 V

VBEsat

-

-

1.2

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

Collector-base capacitance

f = 1 MHz, VBE = 10 V

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

1Pulse test: t < 300µs; D < 2%

fT

- 170 - MHz

Ccb

-

3

- pF

Ceb

-

40

-

2

2008-10-20

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