STB80NF55L-08 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
일치하는 목록
STB80NF55L-08 Datasheet PDF : 10 Pages
| |||
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 27V, ID = 40A
RG = 4.7Ω VGS = 4.5V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 27.5 V, ID = 80A,
VGS = 4.5V
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
Test Conditions
VDD = 27V, ID = 40A,
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
Min.
Typ.
35
145
75
20
30
Max.
100
Unit
ns
ns
nC
nC
nC
Min.
Typ.
85
65
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 80A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80A, di/dt = 100A/µs,
VDD = 20V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
85
280
6.5
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
3/9
Share Link: 