STP80NF55L-08 데이터 시트보기 (PDF) - STMicroelectronics
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STP80NF55L-08 Datasheet PDF : 10 Pages
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STP80NF55L-08
STB80NF55L-08 - STB80NF55L-08-1
N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK/I2PAK
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
STP80NF55L-08
STB80NF55L-08
STB80NF55L-08-1
55 V
55 V
55 V
0.008Ω
0.008Ω
0.008Ω
s TYPICAL RDS(on) = 0.0065Ω
s LOW THRESHOLD DRIVE
s LOGIC LEVEL DEVICE
ID
80 A
80 A
80 A
3
2
1
TO-220
3
1
D2PAK
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT SWITCHING APPLICATION
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID (1)
Drain Current (continuous) at TC = 25°C
ID (1)
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
EAS(3) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
March 2004
Value
55
55
± 16
80
80
320
300
2
15
870
–55 to 175
175
(1) Current Limited by Package
(2) ISD ≤ 80A, di/dt ≤ 500A/µs, VDD= 40V Tj ≤ TJMAX.
(3) Starting Tj= 25°C, ID= 40A, VDD= 40V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C
1/9
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