BCP56-16E6327 데이터 시트보기 (PDF) - Infineon Technologies

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BCP56-16E6327

NPN Silicon AF Transistors

Infineon Technologies 

BCP54...-BCP56...

Maximum Ratings

Parameter

Collector-emitter voltage

BCP54

BCP55

BCP56

Symbol

VCEO

Value

45

60

80

Collector-base voltage

BCP54

BCP55

BCP56

VCBO

45

60

100

Emitter-base voltage

Collector current

Peak collector current, tp ≤ 10 ms

Base current

Peak base current

Total power dissipation-

TS ≤ 120°C

VEBO

5

IC

1

ICM

1.5

IB

100

IBM

200

Ptot

2

Junction temperature

Tj

150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Junction - soldering point1)

RthJS

≤ 15

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

V

A

mA

W

°C

Unit

K/W

2

2011-10-13

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