TEA6845H 데이터 시트보기 (PDF) - NXP Semiconductors.
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TEA6845H Datasheet PDF : 49 Pages
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Philips Semiconductors
New In Car Entertainment (NICE) car radio
Product specification
TEA6845H
SYMBOL
PARAMETER
CONDITIONS
Inputs: pins IFAMP1IN and IFAMP1DEC; note 10
Vi(max)(p)
Vi(n)(eq)
maximum input voltage
(peak value)
equivalent input noise
voltage
1 dB compression point of
IF amplifier 1 output voltage
(peak value)
Rgen = 330 Ω; RL = 330 Ω
Ri
input resistance
Ci
input capacitance
Output: pin IFAMP1OUT
Vo(max)(p)
maximum output voltage
(peak value)
Ro
output resistance
Co
output capacitance
IF AMPLIFIER 2
G
gain
RL = 330 Ω; Vi = 1 mV;
note 11
F
noise figure
IP3
3rd-order intermodulation
Inputs: pins IFAMP2IN and IFAMP2DEC; note 11
Vi(max)(p)
Vi(n)(eq)
maximum input voltage
(peak value)
equivalent input noise
voltage
1 dB compression point of
IF amplifier 2 output voltage
(peak value)
Rgen = 330 Ω; RL = 330 Ω
Ri
input resistance
Ci
input capacitance
Output: pin IFAMP2OUT
Vo(max)(p)
maximum output voltage
(peak value)
Ro
output resistance
Co
output capacitance
FM demodulator and level detector; see Figs 5 and 6
FM LIMITER
Inputs: pins FMLIMIN and FMLIMDEC; note 12
G
gain
Rgen = 50 Ω
Ri
input resistance
Ci
input capacitance
Outputs: pins QDET1 and QDET2
Vo(p-p)
output voltage
(peak-to-peak value)
measured between output
pins
MIN.
200
−
270
−
1.2
270
−
6.5
−
127
500
−
270
−
1.2
270
−
74
270
−
500
TYP.
−
8
330
5
1.5
330
5
8.5
13
130
−
10
330
5
1.5
330
5
80
330
5
700
MAX.
−
10
390
7
−
390
7
10.5
15
−
−
13
390
7
−
390
7
−
390
7
−
UNIT
mV
---n---V-----
Hz
Ω
pF
V
Ω
pF
dB
dB
dBµV
mV
---n---V-----
Hz
Ω
pF
V
Ω
pF
dB
kΩ
pF
mV
2003 Feb 04
21
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