STF14NM50N, STI14NM50N,
STP14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs
in TO-220FP, I²PAK and TO-220 packages
Datasheet - production data
Features
3
2
1
TO-220FP
TAB
TAB
I2PAK 1 2 3
TO-220
3
2
1
Figure 1. Internal schematic diagram
'7$%
*
6
$0Y
Order codes
STF14NM50N
STI14NM50N
STP14NM50N
VDS @
TJmax
RDS(on)
max
ID
550 V
0.32 Ω 12 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
These devices are N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Order codes
STF14NM50N
STI14NM50N
STP14NM50N
Table 1. Device summary
Marking
Package
14NM50N
TO-220FP
I2PAK
TO-220
Packaging
Tube
June 2014
This is information on a product in full production.
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