IRLR024ZPBF 데이터 시트보기 (PDF) - International Rectifier

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IRLR024ZPBF

AUTOMOTIVE MOSFET

International Rectifier 

IRLR/U024ZPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

55 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

––– 0.053 –––

––– 46 58

––– ––– 80

––– ––– 100

V/°C Reference to 25°C, ID = 1mA

e VGS = 10V, ID = 9.6A

e mΩ VGS = 5.0V, ID = 5.0A

e VGS = 4.5V, ID = 3.0A

VGS(th)

Gate Threshold Voltage

1.0 ––– 3.0 V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

7.4 ––– ––– S VDS = 25V, ID = 9.6A

IDSS

Drain-to-Source Leakage Current

––– ––– 20 µA VDS = 55V, VGS = 0V

––– ––– 250

VDS = 55V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 200 nA VGS = 16V

Gate-to-Source Reverse Leakage

––– ––– -200

VGS = -16V

Qg

Total Gate Charge

––– 6.6 9.9

ID = 5.0A

Qgs

Qgd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

–––

–––

1.6

3.9

–––

–––

e nC VDS = 44V

VGS = 5.0V

td(on)

Turn-On Delay Time

––– 8.2 –––

VDD = 28V

tr

Rise Time

––– 43 –––

ID = 5.0A

td(off)

Turn-Off Delay Time

tf

Fall Time

–––

–––

19

16

–––

–––

e ns RG = 28 Ω

VGS = 5.0V

LD

Internal Drain Inductance

––– 4.5 –––

Between lead,

D

LS

Internal Source Inductance

nH 6mm (0.25in.)

––– 7.5 –––

from package

G

Ciss

Coss

Crss

Coss

Coss

Coss eff.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Output Capacitance

Effective Output Capacitance

––– 380 –––

––– 62 –––

––– 39 –––

––– 180 –––

––– 50 –––

––– 81 –––

and center of die contact

S

VGS = 0V

VDS = 25V

pF ƒ = 1.0MHz

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

f VGS = 0V, VDS = 44V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 44V

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

––– ––– 16

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

A showing the

––– ––– 64

integral reverse

G

––– ––– 1.3

e p-n junction diode.

S

V TJ = 25°C, IS = 9.6A, VGS = 0V

––– 16

––– 11

24

17

e ns TJ = 25°C, IF = 9.6A, VDD = 28V

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2

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